FGHL40T65MQD Series

IGBT - 650 V 40 A FS4 medium switching speed IGBT

Catalog

IGBT - 650 V 40 A FS4 medium switching speed IGBT

Part	Test Condition	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Switching Energy	IGBT Type	Power - Max [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C
ON Semiconductor FGHL40T65MQD	10 Ohm 15 V 40 A 400 V	109 ns	22 ns	TO-247-3	33 ns	TO-247-3	520 µJ 860 µJ	Trench Field Stop	238 W	Through Hole	-55 °C	175 ░C	650 V	86 nC	80 A	1.8 V
ON Semiconductor FGHL40S65UQ	6 Ohm 15 V 40 A 400 V			TO-247-3	319 ns	TO-247-3	1.76 mJ 362 µJ	Trench Field Stop		Through Hole	-55 °C	175 ░C	650 V	306 nC	80 A	1.7 V	120 A	32 ns 260 ns

Catalog

IGBT - 650 V 40 A FS4 medium switching speed IGBT

Key Features

• Maximum Junction Temperature:TJ = 175°C

• Low Saturation Voltage:VCE(sat) = 1.35 V ( Typ.) @ Ic = 40 A

• Positive Temperature Co-efficient for Easy Parallel Operating

• High Current Capability

• 100% of the Parts tested for ILM(1)

• High Input Impedance

• Tighten Parameter Distribution

• RoHS Compliant

• Low Conduction Loss Design for Soft Switching Application

• IGBT with Monolithic Reverse Conducting Diode

Description

ON Semiconductor's series of field stop 4th generation IGBTs offer the optimum performance by balancing vcesat and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other Hi performance power conversion applications.