Discrete Semiconductor Products

G3R30MT12J

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SIC MOSFET N-CH 96A TO263-7

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Discrete Semiconductor Products

Active

SIC MOSFET N-CH 96A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	G3R30MT12J

Current - Continuous Drain (Id) @ 25°C	96 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC
Input Capacitance (Ciss) (Max) @ Vds	3901 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	459 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	TO-263-7
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2.69 V

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)
GeneSiC Semiconductor G3R30MT12K	155 nC	N-Channel	90 A	2.69 V	400 W	TO-247-4	36 mOhm	15 V	Through Hole	TO-247-4	175 °C	-55 °C	1.2 kV	3901 pF	15 V
GeneSiC Semiconductor G3R30MT12J	155 nC	N-Channel	96 A	2.69 V		D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	36 mOhm	15 V	Surface Mount	TO-263-7	175 °C	-55 °C	1.2 kV	3901 pF	15 V	459 W

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General part information

N-Channel 1200 V 96A (Tc) 459W (Tc) Surface Mount TO-263-7

Technical documentation and resources