G3R30 Series

Catalog

SIC MOSFET N-CH 90A TO247-4

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)
GeneSiC Semiconductor G3R30MT12K	155 nC	N-Channel	90 A	2.69 V	400 W	TO-247-4	36 mOhm	15 V	Through Hole	TO-247-4	175 °C	-55 °C	1.2 kV	3901 pF	15 V
GeneSiC Semiconductor G3R30MT12J	155 nC	N-Channel	96 A	2.69 V		D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	36 mOhm	15 V	Surface Mount	TO-263-7	175 °C	-55 °C	1.2 kV	3901 pF	15 V	459 W