Specification	FDFM2N111

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.8 nC
Input Capacitance (Ciss) (Max) @ Vds	273 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	1.7 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	MicroFET 3x3mm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

FDFM2N111 Series

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20 V, 4 A, 100 mΩ

Part	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	FET Feature	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id
ON Semiconductor FDFM2N111	Surface Mount	20 V	12 V	2.5 V 4.5 V	4 A	MicroFET 3x3mm	273 pF	1.7 W	-55 °C	150 °C	3.8 nC	N-Channel	Schottky Diode (Isolated)	100 mOhm	MOSFET (Metal Oxide)	1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDFM2N111 Series

FDFM2N111 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package.This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low onstate resistance.