FDFM2N111 Series

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20 V, 4 A, 100 mΩ

Catalog

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20 V, 4 A, 100 mΩ

Part	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	FET Feature	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id
ON Semiconductor FDFM2N111	Surface Mount	20 V	12 V	2.5 V 4.5 V	4 A	MicroFET 3x3mm	273 pF	1.7 W	-55 °C	150 °C	3.8 nC	N-Channel	Schottky Diode (Isolated)	100 mOhm	MOSFET (Metal Oxide)	1.5 V

Catalog

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20 V, 4 A, 100 mΩ

Key Features

• 4 A, 20 V

• RDS(ON)= 100 mΩ @ VGS= 4.5 V

• RDS(ON)= 150 mΩ @ VGS= 2.5 V

• Low Profile – 0.8 mm maximum – in the new packageMicroFET 3x3 mm

Description

FDFM2N111 combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package.This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low onstate resistance.