Discrete Semiconductor Products

SIR5110DP-T1-RE3

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N-CHANNEL 100 V (D-S) MOSFET POW

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Discrete Semiconductor Products

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N-CHANNEL 100 V (D-S) MOSFET POW

Technical Specifications

Parameters and characteristics for this part

Specification	SIR5110DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	13.5 A, 47.6 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	920 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	59.5 W, 4.8 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Vishay General Semiconductor - Diodes Division SIR5110DP-T1-RE3	PowerPAK® SO-8	4.8 W 59.5 W	100 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	20 V	13.5 A 47.6 A	-55 °C	150 °C	920 pF	4 V	N-Channel	Surface Mount	20 nC	6 mOhm	10 V	7.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 13.5A (Ta), 47.6A (Tc) 4.8W (Ta), 59.5W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources