SIR5110 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
N-CHANNEL 100 V (D-S) MOSFET POW
| Part | Supplier Device Package | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Package / Case | Technology | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | FET Type | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [x] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | PowerPAK® SO-8 | 4.8 W 59.5 W | 100 V | PowerPAK® SO-8 | MOSFET (Metal Oxide) | 20 V | 13.5 A 47.6 A | -55 °C | 150 °C | 920 pF | 4 V | N-Channel | Surface Mount | 20 nC | 6 mOhm | 10 V | 7.5 V |