Discrete Semiconductor Products

IRFP460LCPBF

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MOSFET N-CH 500V 20A TO247-3

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Discrete Semiconductor Products

Active

MOSFET N-CH 500V 20A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP460LCPBF

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	FET Type	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division IRFP460	270 mOhm	500 V	210 nC	-55 °C	150 °C	TO-247-3	4200 pF	TO-247AC	Through Hole	N-Channel	MOSFET (Metal Oxide)	4 V	20 V	20 A	10 V
Vishay General Semiconductor - Diodes Division IRFP460LCPBF	270 mOhm	500 V	120 nC	-55 °C	150 °C	TO-247-3		TO-247AC	Through Hole	N-Channel	MOSFET (Metal Oxide)	4 V	30 V	20 A	10 V	3600 pF
Vishay General Semiconductor - Diodes Division IRFP460A	270 mOhm	500 V		-55 °C	150 °C	TO-247-3	3100 pF	TO-247AC	Through Hole	N-Channel	MOSFET (Metal Oxide)	4 V	30 V	20 A	10 V		105 nC
Vishay General Semiconductor - Diodes Division IRFP460P	270 mOhm	500 V	210 nC	-55 °C	150 °C	TO-247-3	4200 pF	TO-247AC	Through Hole	N-Channel	MOSFET (Metal Oxide)	4 V		20 A

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General part information

N-Channel 500 V 20A (Tc) 280W (Tc) Through Hole TO-247AC

Technical documentation and resources