IRFP460 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 20A TO247-3
| Part | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Mounting Type | FET Type | Technology | Vgs(th) (Max) @ Id | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 270 mOhm | 500 V | 210 nC | -55 °C | 150 °C | TO-247-3 | 4200 pF | TO-247AC | Through Hole | N-Channel | MOSFET (Metal Oxide) | 4 V | 20 V | 20 A | 10 V | ||
Vishay General Semiconductor - Diodes Division | 270 mOhm | 500 V | 120 nC | -55 °C | 150 °C | TO-247-3 | TO-247AC | Through Hole | N-Channel | MOSFET (Metal Oxide) | 4 V | 30 V | 20 A | 10 V | 3600 pF | ||
Vishay General Semiconductor - Diodes Division | 270 mOhm | 500 V | -55 °C | 150 °C | TO-247-3 | 3100 pF | TO-247AC | Through Hole | N-Channel | MOSFET (Metal Oxide) | 4 V | 30 V | 20 A | 10 V | 105 nC | ||
Vishay General Semiconductor - Diodes Division | 270 mOhm | 500 V | 210 nC | -55 °C | 150 °C | TO-247-3 | 4200 pF | TO-247AC | Through Hole | N-Channel | MOSFET (Metal Oxide) | 4 V | 20 A |