Discrete Semiconductor Products

TSM9434CS

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-20V, -6.4A, SINGLE P-CHANNEL PO

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Discrete Semiconductor Products

Active

-20V, -6.4A, SINGLE P-CHANNEL PO

Technical Specifications

Parameters and characteristics for this part

Specification	TSM9434CS

Current - Continuous Drain (Id) @ 25°C	6.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1020 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs (Max) [Max]	Package / Case	Package / Case	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Taiwan Semiconductor Corporation TSM9434CS	8 V	0.154 in	8-SOIC	3.9 mm	Surface Mount	19 nC	2.5 W	20 V	P-Channel	1020 pF	150 °C	-55 °C	6.4 A	MOSFET (Metal Oxide)	2.5 V	4.5 V	8-SOP	1 V	40 mOhm
Taiwan Semiconductor Corporation TSM9434CS RLG	8 V	0.154 in	8-SOIC	3.9 mm	Surface Mount	19 nC	2.5 W	20 V	P-Channel	1020 pF	150 °C	-55 °C	6.4 A	MOSFET (Metal Oxide)	2.5 V	4.5 V	8-SOP	1 V	40 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 6.4A (Tc) 2.5W (Ta) Surface Mount 8-SOP

Technical documentation and resources

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