Specification	NSR02301MX4T5G

Capacitance @ Vr, F	19 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	01005
Package / Case	0402 Metric
Speed	Any Speed
Speed	200 mA
Supplier Device Package	2-X4DFN (0.45x0.24)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	540 mV

NSR02301MX4 Series

200 mA, 30 V, Trench-based Schottky Diode in X4DFN2 (01005)

Part	Capacitance @ Vr, F	Package / Case	Package / Case	Supplier Device Package	Speed	Speed	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Technology	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
ON Semiconductor NSR02301MX4T5G	19 pF	01005	0402 Metric	2-X4DFN (0.45x0.24)	Any Speed	200 mA	Surface Mount	540 mV	200 mA	Schottky	100 µA	30 V	-55 °C	125 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NSR02301MX4 Series

Schottky Diode optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in space saving micro-packaging ideal for space constrained applications.