NSR02301MX4 Series

200 mA, 30 V, Trench-based Schottky Diode in X4DFN2 (01005)

Catalog

200 mA, 30 V, Trench-based Schottky Diode in X4DFN2 (01005)

Part	Capacitance @ Vr, F	Package / Case	Package / Case	Supplier Device Package	Speed	Speed	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Technology	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
ON Semiconductor NSR02301MX4T5G	19 pF	01005	0402 Metric	2-X4DFN (0.45x0.24)	Any Speed	200 mA	Surface Mount	540 mV	200 mA	Schottky	100 µA	30 V	-55 °C	125 °C

Catalog

200 mA, 30 V, Trench-based Schottky Diode in X4DFN2 (01005)

Key Features

• Smallest Package Available (01005); 0.445mm x 0.24mm

• 200 mA Continuous Forward Current

• Low Forward Voltage Drop, VF= 350 mV (Typical) @ IF= 100 mA

• Low Reverse Current, 25 µA (Typical) @ VR= 30 V

• Low trr= 11 ns Typical

• Low Capacitance, 19 pF (Typical)

Description

Schottky Diode optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in space saving micro-packaging ideal for space constrained applications.