Discrete Semiconductor Products

PJD4NA65_L2_00001

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650V N-CHANNEL MOSFET

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Discrete Semiconductor Products

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650V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJD4NA65_L2_00001

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.4 nC
Input Capacitance (Ciss) (Max) @ Vds	463 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	77 W
Rds On (Max) @ Id, Vgs	2.7 Ohm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)
Panjit International Inc. PJD4NA65_L2_00001	4 A	Surface Mount	77 W	11.4 nC	10 V	463 pF	4 V	2.7 Ohm	MOSFET (Metal Oxide)	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	-55 °C	150 °C	TO-252	650 V
Panjit International Inc. PJD4NA65_R2_00001	4 A	Surface Mount		11.4 nC	10 V	463 pF	4 V	2.7 Ohm	MOSFET (Metal Oxide)	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	-55 °C	150 °C	TO-252AA	650 V

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General part information

N-Channel 650 V 4A (Ta) 77W (Tc) Surface Mount TO-252

Technical documentation and resources

No documents available