Specification	NXH100B120H3Q0PG

Configuration	2 Independent
Current - Collector (Ic) (Max) [Max]	61 A
Current - Collector Cutoff (Max) [Max]	200 µA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	9.075 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	186 W
Supplier Device Package	22-PIM
Supplier Device Package [x]	55
Supplier Device Package [y]	32.5
Vce(on) (Max) @ Vge, Ic	2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

NXH100B120H3Q0 Series

Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.

Part	Vce(on) (Max) @ Vge, Ic	Configuration	Supplier Device Package [y]	Supplier Device Package	Supplier Device Package [x]	Current - Collector (Ic) (Max)	Mounting Type	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type	Input	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Input Capacitance (Cies) @ Vce	Current - Collector (Ic) (Max) [Max]
ON Semiconductor NXH100B120H3Q0STG	2.3 V	2 Independent	32.5	22-PIM/Q0BOOST	55	50 A	Chassis Mount	186 W	150 °C	-40 °C	Trench Field Stop	Standard	Module	1200 V	200 µA	9.075 nF
ON Semiconductor NXH100B120H3Q0PG	2.3 V	2 Independent	32.5	22-PIM	55		Chassis Mount	186 W	150 °C	-40 °C	Trench Field Stop	Standard	Module	1200 V	200 µA	9.075 nF	61 A
ON Semiconductor NXH100B120H3Q0SG	2.3 V	2 Independent	32.5	22-PIM/Q0BOOST	55		Chassis Mount	186 W	150 °C	-40 °C	Trench Field Stop	Standard	Module	1200 V	200 µA	9.075 nF	61 A
ON Semiconductor NXH100B120H3Q0PTG	2.3 V	2 Independent	32.5	22-PIM	55	50 A	Chassis Mount	186 W	150 °C	-40 °C	Trench Field Stop	Standard	Module	1200 V	200 µA	9.075 nF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 67.67
		10	$ 52.01
		25	$ 51.24
Newark	Each	1	$ 63.74
		5	$ 61.07
		10	$ 58.39
		48	$ 53.28
ON Semiconductor	N/A	1	$ 47.14

Description

General part information

NXH100B120H3Q0 Series

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Product Change Notice EN

Datasheet