R5060PF

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DIODE GEN PURP 600V 50A DO21

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 50A DO21

Technical Specifications

Parameters and characteristics for this part

Specification	R5060PF

Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Press Fit
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-208AA
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-21
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.05 V

Part	Mounting Type	Supplier Device Package	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Reverse Leakage @ Vr
Microchip Technology R5060PF	Press Fit	DO-21	Standard	600 V	Standard Recovery >500ns	200 mA	1.05 V	50 A	175 ░C	-65 C	DO-208AA	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 43.74

General part information

Diode 600 V 50A Press Fit DO-21

Technical documentation and resources

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