Discrete Semiconductor Products

MSQ1PJ-M3/H

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DIODE GEN PURP 600V 1A MICROSMP

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 1A MICROSMP

Technical Specifications

Parameters and characteristics for this part

Specification	MSQ1PJ-M3/H

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	DO-219AD
Reverse Recovery Time (trr)	650 ns
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-219AD (MicroSMP)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Package / Case	Mounting Type	Supplier Device Package	Speed	Speed	Current - Reverse Leakage @ Vr	Qualification	Grade
Vishay General Semiconductor - Diodes Division MSQ1PJ-M3/H	1 A	1.2 V	650 ns	600 V	4 pF	175 ░C	-55 C	Standard	DO-219AD	Surface Mount	DO-219AD (MicroSMP)	Standard Recovery >500ns	200 mA	1 µA
Vishay General Semiconductor - Diodes Division MSQ1PJHM3/H	1 A	1.2 V	650 ns	600 V	4 pF	175 ░C	-55 C	Standard	DO-219AD	Surface Mount	DO-219AD (MicroSMP)	Standard Recovery >500ns	200 mA	1 µA	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 1A Surface Mount DO-219AD (MicroSMP)

Technical documentation and resources