MSQ1 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A MICROSMP
| Part | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Technology | Package / Case | Mounting Type | Supplier Device Package | Speed | Speed | Current - Reverse Leakage @ Vr | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1 A | 1.2 V | 650 ns | 600 V | 4 pF | 175 ░C | -55 C | Standard | DO-219AD | Surface Mount | DO-219AD (MicroSMP) | Standard Recovery >500ns | 200 mA | 1 µA | ||
Vishay General Semiconductor - Diodes Division | 1 A | 1.2 V | 650 ns | 600 V | 4 pF | 175 ░C | -55 C | Standard | DO-219AD | Surface Mount | DO-219AD (MicroSMP) | Standard Recovery >500ns | 200 mA | 1 µA | AEC-Q101 | Automotive |