Discrete Semiconductor Products

SIDR638DP-T1-GE3

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MOSFET N-CH 40V 100A PPAK SO-8DC

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Discrete Semiconductor Products

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MOSFET N-CH 40V 100A PPAK SO-8DC

Technical Specifications

Parameters and characteristics for this part

Specification	SIDR638DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	204 nC
Input Capacitance (Ciss) (Max) @ Vds	10500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	0.88 mOhm
Supplier Device Package	PowerPAK® SO-8DC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.3 V

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIDR638DP-T1-GE3	N-Channel	-55 °C	150 °C	0.88 mOhm	4.5 V 10 V	204 nC	-16 V 20 V	125 W	10500 pF	PowerPAK® SO-8DC	40 V	Surface Mount	PowerPAK® SO-8	100 A	MOSFET (Metal Oxide)	2.3 V

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General part information

N-Channel 40 V 100A (Tc) 125W (Tc) Surface Mount PowerPAK® SO-8DC

Technical documentation and resources