SIDR638 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 40V 100A PPAK SO-8DC
| Part | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | N-Channel | -55 °C | 150 °C | 0.88 mOhm | 4.5 V 10 V | 204 nC | -16 V 20 V | 125 W | 10500 pF | PowerPAK® SO-8DC | 40 V | Surface Mount | PowerPAK® SO-8 | 100 A | MOSFET (Metal Oxide) | 2.3 V |