Specification	FMBA14

Current - Collector (Ic) (Max) [Max]	1.2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20000
Frequency - Transition	1.25 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	700 mW
Supplier Device Package	SuperSOT™-6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

FMBA14 Series

NPN Multi-Chip Darlington Transistor

Part	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor FMBA14	2 NPN (Dual)	20000	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	1.2 A	700 mW	1.5 V	Surface Mount	1.25 MHz	100 nA	-55 °C	150 °C	30 V
ON Semiconductor FMBA14	2 NPN (Dual)	20000	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	1.2 A	700 mW	1.5 V	Surface Mount	1.25 MHz	100 nA	-55 °C	150 °C	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.