Discrete Semiconductor Products

SI6473DQ-T1-E3

Obsolete

MOSFET P-CH 20V 6.2A 8TSSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 6.2A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6473DQ-T1-E3

Current - Continuous Drain (Id) @ 25°C	6.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power Dissipation (Max)	1.08 W
Rds On (Max) @ Id, Vgs	12.5 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	450 mV

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Package / Case [custom]	Package / Case [custom]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI6473DQ-T1-E3	12.5 mOhm	70 nC	450 mV	8 V	8-TSSOP	0.173 "	4.4 mm	20 V	1.8 V 4.5 V	P-Channel	MOSFET (Metal Oxide)	8-TSSOP	Surface Mount	6.2 A	1.08 W	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 6.2A (Ta) 1.08W (Ta) Surface Mount 8-TSSOP

Technical documentation and resources

No documents available