SI6473 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 20V 6.2A 8TSSOP
| Part | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Vgs (Max) | Package / Case | Package / Case [custom] | Package / Case [custom] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Technology | Supplier Device Package | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 12.5 mOhm | 70 nC | 450 mV | 8 V | 8-TSSOP | 0.173 " | 4.4 mm | 20 V | 1.8 V 4.5 V | P-Channel | MOSFET (Metal Oxide) | 8-TSSOP | Surface Mount | 6.2 A | 1.08 W | -55 °C | 150 °C |