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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3506AL |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 50 |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Power - Max [Max] | 1 W |
| Supplier Device Package | TO-5AA |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 11.99 | |
| Microchip Direct | N/A | 1 | $ 12.91 | |
| Newark | Each | 100 | $ 11.99 | |
| 500 | $ 11.53 | |||
Description
General part information
JANTXV2N3506A-Transistor Series
This specification covers the performance requirements for NPN, silicon, switching 2N3506 and 2N3507 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/349. Two levels of product assurance are provided for each unencapsulated die (JANHC and JANKC). Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device type are as follows: Similar to TO-39 and surface mount version U4. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/349.
Documents
Technical documentation and resources
