SIZF360DT-T1-GE3

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MOSFET 2N-CH 30V 23A 6POWERPAIR

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 23A 6POWERPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZF360DT-T1-GE3

Configuration	2 N-Channel (Dual), Schottky
Current - Continuous Drain (Id) @ 25°C	143 A, 34 A, 23 A, 83 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	22 nC
Gate Charge (Qg) (Max) @ Vgs	62 nC
Input Capacitance (Ciss) (Max) @ Vds	3150 pF, 1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerPair™
Power - Max	52 W, 78 W, 4.3 W, 3.8 W
Rds On (Max) @ Id, Vgs	1.9 mOhm, 4.5 mOhm
Supplier Device Package	6-PowerPair™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Power - Max	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIZF360DT-T1-GE3	1100 pF 3150 pF	1.9 mOhm 4.5 mOhm	Surface Mount	-55 °C	150 °C	6-PowerPair™	6-PowerPair™	22 nC	62 nC	MOSFET (Metal Oxide)	3.8 W 4.3 W 52 W 78 W	30 V	2.2 V	2 N-Channel (Dual) Schottky	23 A 34 A 83 A 143 A

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General part information

Mosfet Array 30V 23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc) 3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc) Surface Mount 6-PowerPair™

Technical documentation and resources