SIZF360 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 30V 23A 6POWERPAIR
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs | Technology | Power - Max | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id [Max] | Configuration | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1100 pF 3150 pF | 1.9 mOhm 4.5 mOhm | Surface Mount | -55 °C | 150 °C | 6-PowerPair™ | 6-PowerPair™ | 22 nC | 62 nC | MOSFET (Metal Oxide) | 3.8 W 4.3 W 52 W 78 W | 30 V | 2.2 V | 2 N-Channel (Dual) Schottky | 23 A 34 A 83 A 143 A |