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8-PQFN
Discrete Semiconductor Products

FDMT800100DC

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 100 V, 162 A, 0.0023 OHM, DUAL COOL 88, SURFACE MOUNT

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8-PQFN
Discrete Semiconductor Products

FDMT800100DC

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 100 V, 162 A, 0.0023 OHM, DUAL COOL 88, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMT800100DC
Current - Continuous Drain (Id) @ 25°C162 A, 24 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]111 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]7835 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)3.2 W, 156 W
Rds On (Max) @ Id, Vgs [Max]2.95 mOhm
Supplier Device Package8-Dual Cool™88
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 9.12
10$ 6.26
100$ 4.63
500$ 4.21
Digi-Reel® 1$ 9.12
10$ 6.26
100$ 4.63
500$ 4.21
Tape & Reel (TR) 3000$ 4.21
NewarkEach (Supplied on Full Reel) 1500$ 4.01
ON SemiconductorN/A 1$ 3.87

Description

General part information

FDMT800100DC Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual CoolTMpackage technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.