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IRF840ALPBF
Discrete Semiconductor Products

IRF9Z14LPBF

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IRF840ALPBF
Discrete Semiconductor Products

IRF9Z14LPBF

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF9Z14LPBF
Current - Continuous Drain (Id) @ 25°C6.7 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds270 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)43 W, 3.7 W
Rds On (Max) @ Id, Vgs500 mOhm
Supplier Device PackageI2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1000$ 0.80

Description

General part information

IRF9Z14 Series

P-Channel 60 V 6.7A (Tc) 3.7W (Ta), 43W (Tc) Through Hole I2PAK

Documents

Technical documentation and resources