IRF9Z14 Series

Catalog

MOSFET P-CH 60V 6.7A I2PAK

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division IRF9Z14LPBF	60 V	20 V	I2PAK TO-262-3 Long Leads TO-262AA	10 V	3.7 W 43 W	MOSFET (Metal Oxide)	I2PAK	4 V	6.7 A	500 mOhm	Through Hole	12 nC	P-Channel	270 pF	-55 °C	175 ░C
Vishay General Semiconductor - Diodes Division IRF9Z14SPBF	60 V	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	3.7 W 43 W	MOSFET (Metal Oxide)	TO-263 (D2PAK)	4 V	6.7 A	500 mOhm	Surface Mount	12 nC	P-Channel	270 pF	-55 °C	175 ░C
Vishay General Semiconductor - Diodes Division IRF9Z14PBF	60 V	20 V	TO-220-3	10 V	43 W	MOSFET (Metal Oxide)	TO-220AB	4 V	6.7 A	500 mOhm	Through Hole	12 nC	P-Channel	270 pF	-55 °C	175 ░C