Discrete Semiconductor Products
STF22NM60N
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.2 OHM, 16 A MDMESH(TM) II POWER MOSFET IN TO-220FP
Discrete Semiconductor Products
STF22NM60N
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.2 OHM, 16 A MDMESH(TM) II POWER MOSFET IN TO-220FP
Technical Specifications
Parameters and characteristics for this part
| Specification | STF22NM60N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Rds On (Max) @ Id, Vgs | 220 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1925 | $ 4.31 | |
Description
General part information
STF22NM60N Series
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources