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FDT86106LZ
Discrete Semiconductor Products

FQT1N60CTF-WS

LTB
ON Semiconductor

POWER MOSFET, N-CHANNEL, QFET<SUP>®</SUP>, 600 V, 0.2 A, 11.5 Ω, SOT-223

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FDT86106LZ
Discrete Semiconductor Products

FQT1N60CTF-WS

LTB
ON Semiconductor

POWER MOSFET, N-CHANNEL, QFET<SUP>®</SUP>, 600 V, 0.2 A, 11.5 Ω, SOT-223

Technical Specifications

Parameters and characteristics for this part

SpecificationFQT1N60CTF-WS
Current - Continuous Drain (Id) @ 25°C200 mA
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]6.2 nC
Input Capacitance (Ciss) (Max) @ Vds170 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max)2.1 W
Rds On (Max) @ Id, Vgs11.5 Ohm
Supplier Device PackageSOT-223-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.90
10$ 0.65
100$ 0.45
500$ 0.35
1000$ 0.32
2000$ 0.29
Digi-Reel® 1$ 0.90
10$ 0.65
100$ 0.45
500$ 0.35
1000$ 0.32
2000$ 0.29
Tape & Reel (TR) 4000$ 0.27
8000$ 0.26
NewarkEach (Supplied on Full Reel) 3000$ 0.32
6000$ 0.30
12000$ 0.28
18000$ 0.26
30000$ 0.25
ON SemiconductorN/A 1$ 0.26

Description

General part information

FQT1N60CTF-WS Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.