Specification	FDMD8240L

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	4230 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	2.1 W
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	12-Power3.3x5
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDMD8240L Series

Dual N-Channel Power Trench® MOSFET 40V, 98A, 2.6mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Configuration	Drain to Source Voltage (Vdss)
ON Semiconductor FDMD8240L	23 A	-55 °C	150 °C	12-Power3.3x5	3 V	MOSFET (Metal Oxide)	4230 pF	56 nC	2.1 W	2.6 mOhm	Surface Mount	2 N-Channel (Dual)	40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.63
		10	$ 2.18
		100	$ 1.74
		500	$ 1.47
		1000	$ 1.25
	Digi-Reel®	1	$ 2.63
		10	$ 2.18
		100	$ 1.74
		500	$ 1.47
		1000	$ 1.25
	Tape & Reel (TR)	3000	$ 1.18
		6000	$ 1.14
		9000	$ 1.10
ON Semiconductor	N/A	1	$ 1.01

Description

General part information

FDMD8240L Series

This device includes two 40V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain are internally connected for half/full bridge, low source inductance package, low rDS(on)/ QgFOM silicon.