FDMD8240L Series

Dual N-Channel Power Trench® MOSFET 40V, 98A, 2.6mΩ

Catalog

Dual N-Channel Power Trench® MOSFET 40V, 98A, 2.6mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Configuration	Drain to Source Voltage (Vdss)
ON Semiconductor FDMD8240L	23 A	-55 °C	150 °C	12-Power3.3x5	3 V	MOSFET (Metal Oxide)	4230 pF	56 nC	2.1 W	2.6 mOhm	Surface Mount	2 N-Channel (Dual)	40 V

Catalog

Dual N-Channel Power Trench® MOSFET 40V, 98A, 2.6mΩ

Key Features

• Max rDS(on)= 2.6 mΩ at VGS= 10 V, ID= 23 A

• Max rDS(on)= 3.95 mΩ at VGS= 4.5 V, ID= 19 A

• Ideal for Flexible Layout in Primary Side of Bridge Topology

• 100% UIL Tested

• Kelvin High Side MOSFET Drive Pin-out Capability

• Termination is Lead-free and RoHS Compliant

Description

This device includes two 40V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain are internally connected for half/full bridge, low source inductance package, low rDS(on)/ QgFOM silicon.