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VRF157FL
Discrete Semiconductor Products

VRF157FL

Active
Microchip Technology

RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET

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VRF157FL
Discrete Semiconductor Products

VRF157FL

Active
Microchip Technology

RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET

Technical Specifications

Parameters and characteristics for this part

SpecificationVRF157FL
ConfigurationN-Channel
Current - Test800 mA
Current Rating (Amps)4 mA
Frequency80 MHz
Gain21 dB
Package / CaseT2
Power - Output600 W
Supplier Device PackageT2
TechnologyMOSFET (Metal Oxide)
Voltage - Rated170 V
Voltage - Test50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 10$ 466.84
Microchip DirectPIZZA BOX 1$ 466.84
100$ 395.02
250$ 377.07
500$ 366.80
1000$ 356.55
5000$ 341.17
NewarkEach 1$ 466.84
100$ 395.02
250$ 377.07
500$ 366.80

Description

General part information

RF-MOSFET-170V Series

The VRF family of RF MOSFETs includes improved replacements for

industry-standard RF transistors. They provide improved ruggedness by

increasing the Bvdss over 30 percent from the industry-standard 125V to 170V