FDT439N
ActiveN-CHANNEL 2.5V SPECIFIED ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 30V, 6.3A, 45MΩ
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FDT439N
ActiveN-CHANNEL 2.5V SPECIFIED ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 30V, 6.3A, 45MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDT439N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.3 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) [Max] | 3 W |
| Rds On (Max) @ Id, Vgs | 45 mOhm |
| Supplier Device Package | SOT-223-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.38 | |
| 10 | $ 0.87 | |||
| 100 | $ 0.58 | |||
| 500 | $ 0.45 | |||
| 1000 | $ 0.41 | |||
| 2000 | $ 0.38 | |||
| Digi-Reel® | 1 | $ 1.38 | ||
| 10 | $ 0.87 | |||
| 100 | $ 0.58 | |||
| 500 | $ 0.45 | |||
| 1000 | $ 0.41 | |||
| 2000 | $ 0.38 | |||
| Tape & Reel (TR) | 4000 | $ 0.35 | ||
| 8000 | $ 0.33 | |||
| ON Semiconductor | N/A | 1 | $ 0.32 | |
Description
General part information
FDT439N Series
This N-Channel Enhancement mode field effect transistor is produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.