FDT439N Series

N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor 30V, 6.3A, 45mΩ

Catalog

N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor 30V, 6.3A, 45mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Technology	Package / Case	FET Type	Drain to Source Voltage (Vdss)
ON Semiconductor FDT439N	6.3 A	2.5 V 4.5 V	Surface Mount	-55 °C	150 °C	1 V	3 W	SOT-223-4	15 nC	8 V	500 pF	45 mOhm	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	N-Channel	30 V

Catalog

N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor 30V, 6.3A, 45mΩ

Key Features

• 6.3 A, 30 VRDS(on)= 0.045 Ω @ VGS= 4.5 VRDS(on)= 0.058 Ω @ VGS= 2.5 V

• Fast switching speed

• High power and current handling capabitlity in a widely used surface mount package

Description

This N-Channel Enhancement mode field effect transistor is produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.