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8-Power VDFN
Discrete Semiconductor Products

PXN9R0-30QLJ

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Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

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8-Power VDFN
Discrete Semiconductor Products

PXN9R0-30QLJ

Active
Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPXN9R0-30QLJ
Current - Continuous Drain (Id) @ 25°C41.8 A, 11.4 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20.7 nC
Input Capacitance (Ciss) (Max) @ Vds865 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)1.9 W, 26 W
Rds On (Max) @ Id, Vgs9.1 mOhm
Supplier Device PackageMLPAK33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.51
10$ 0.44
25$ 0.41
100$ 0.33
250$ 0.30
500$ 0.26
1000$ 0.20
Digi-Reel® 1$ 0.51
10$ 0.44
25$ 0.41
100$ 0.33
250$ 0.30
500$ 0.26
1000$ 0.20
N/A 4514$ 0.50
Tape & Reel (TR) 3000$ 0.18
6000$ 0.17
15000$ 0.16
30000$ 0.15

Description

General part information

PXN9R0-30QL Series

N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.