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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Supplier Device Package | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MLPAK33 | N-Channel | 150 °C | -55 °C | 8-PowerVDFN | Surface Mount | 4.5 V 10 V | 9.1 mOhm | MOSFET (Metal Oxide) | 30 V | 11.4 A 41.8 A | 20.7 nC | 1.9 W 26 W | 2.5 V | 20 V | 865 pF |