Discrete Semiconductor Products
STI33N65M2
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.117 OHM TYP., 24 A MDMESH M2 POWER MOSFET IN I2PAK PACKAGE
Discrete Semiconductor Products
STI33N65M2
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.117 OHM TYP., 24 A MDMESH M2 POWER MOSFET IN I2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STI33N65M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 41.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1790 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) | 190 W |
| Rds On (Max) @ Id, Vgs | 140 mOhm |
| Supplier Device Package | I2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1165 | $ 4.40 | |
Description
General part information
STI33N65M2 Series
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources