Specification	FFD04H60S

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	60 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-252AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.1 V

FFD04H60S Series

4A, 600V, Hyperfast II Diode

Part	Package / Case	Technology	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]
ON Semiconductor FFD04H60S	DPAK (2 Leads + Tab) SC-63 TO-252-3	Standard	100 µA	TO-252 (DPAK)	2.1 V	Surface Mount	150 °C	-65 C	4 A	60 ns	200 mA 500 ns	600 V
ON Semiconductor FFD04H60S	DPAK (2 Leads + Tab) SC-63 TO-252-3	Standard	100 µA	TO-252AA	2.1 V	Surface Mount	150 °C	-65 C	4 A	60 ns	200 mA 500 ns	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	470	$ 0.64
		470	$ 0.64

Description

General part information

FFD04H60S Series

The FFD04H60S is a hyperfast II diode and silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping diodes in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.