FFD04H60S Series

4A, 600V, Hyperfast II Diode

Catalog

4A, 600V, Hyperfast II Diode

Part	Package / Case	Technology	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]
ON Semiconductor FFD04H60S	DPAK (2 Leads + Tab) SC-63 TO-252-3	Standard	100 µA	TO-252 (DPAK)	2.1 V	Surface Mount	150 °C	-65 C	4 A	60 ns	200 mA 500 ns	600 V
ON Semiconductor FFD04H60S	DPAK (2 Leads + Tab) SC-63 TO-252-3	Standard	100 µA	TO-252AA	2.1 V	Surface Mount	150 °C	-65 C	4 A	60 ns	200 mA 500 ns	600 V

Catalog

4A, 600V, Hyperfast II Diode

Key Features

• Hyperfast recovery, Trr= 60ns (@IF= 4A)

• Max Forward Voltage, VF= 2.1V (@ TC= 25°C)

• 600V Reverse Voltage and High Reliability

• Avalanche Energy Rated

• RoHS Compliant

Description

The FFD04H60S is a hyperfast II diode and silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping diodes in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.