Discrete Semiconductor Products

MJE253G

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BIPOLAR (BJT) SINGLE TRANSISTOR, AUDIO, PNP, 100 V, 4 A, 1.5 W, TO-225, THROUGH HOLE

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, AUDIO, PNP, 100 V, 4 A, 1.5 W, TO-225, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	MJE253G

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	40 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	1.5 W
Supplier Device Package	TO-126
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

4.0 A, 100 V PNP Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Transistor Type	Supplier Device Package	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Frequency - Transition
ON Semiconductor MJE253G	40	TO-126-3 TO-225AA	600 mV	100 nA	PNP	TO-126	Through Hole	150 °C	-65 °C	100 V	4 A	1.5 W	40 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.