MJE253 Series

4.0 A, 100 V PNP Bipolar Power Transistor

Catalog

4.0 A, 100 V PNP Bipolar Power Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Transistor Type	Supplier Device Package	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Frequency - Transition
ON Semiconductor MJE253G	40	TO-126-3 TO-225AA	600 mV	100 nA	PNP	TO-126	Through Hole	150 °C	-65 °C	100 V	4 A	1.5 W	40 MHz

4.0 A, 100 V PNP Bipolar Power Transistor

• High Collector-Emitter Sustaining Voltage -VCEO(sus)= 100 Vdc (Min) MJE243, MJE253

• High DC Current Gain @ IC= 200 mAdchFE= 40-200hFE= 40-120 - MJE243, MJE253

• Low Collector-Emitter Saturation Voltage -VCE(sat)= 0.3 Vdc (Max) @ IC= 500 mAdc

• High Current Gain Bandwidth Product -fT= 40 MHz (Min) @ IC= 100 mAdc

• Annular Construction for Low LeakagesICBO= 100 nAdc (Max) @ Rated VCB

• Pb-Free Packages are Available

The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.