TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

IRFBF30STRLPBF

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 900V 3.6A TO263

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Discrete Semiconductor Products

IRFBF30STRLPBF

Active

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 900V 3.6A TO263

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFBF30STRLPBF

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	3.7 Ohm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFBF30 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package
Vishay General Semiconductor - Diodes Division IRFBF30PBF	10 V	3.7 Ohm	3.6 A	Through Hole	78 nC	TO-220-3	125 W	4 V	1200 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	900 V	20 V	TO-220AB
Vishay General Semiconductor - Diodes Division IRFBF30S	10 V	3.7 Ohm	3.6 A	Surface Mount	78 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	125 W	4 V	1200 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	900 V	20 V	TO-263 (D2PAK)
Vishay General Semiconductor - Diodes Division IRFBF30L	10 V	3.7 Ohm	3.6 A	Through Hole	78 nC	I2PAK TO-262-3 Long Leads TO-262AA		4 V	1200 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	900 V	20 V	I2PAK
Vishay General Semiconductor - Diodes Division IRFBF30STRLPBF	10 V	3.7 Ohm	3.6 A	Surface Mount	78 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	125 W	4 V	1200 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	900 V	20 V	TO-263 (D2PAK)
Vishay General Semiconductor - Diodes Division IRFBF30SPBF	10 V	3.7 Ohm	3.6 A	Surface Mount	78 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	125 W	4 V	1200 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	900 V	20 V	TO-263 (D2PAK)
Vishay General Semiconductor - Diodes Division IRFBF30	10 V	3.7 Ohm	3.6 A	Through Hole	78 nC	TO-220-3	125 W	4 V	1200 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	900 V	20 V	TO-220AB
Vishay General Semiconductor - Diodes Division IRFBF30PBF-BE3		3.7 Ohm	3.6 A	Through Hole	78 nC	TO-220-3	125 W	4 V	1200 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	900 V	20 V	TO-220AB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.44
		10	$ 2.89
		100	$ 2.34
	Digi-Reel®	1	$ 3.44
		10	$ 2.89
		100	$ 2.34
	Tape & Reel (TR)	800	$ 2.08
		1600	$ 1.78
		2400	$ 1.68
		5600	$ 1.61

Description

General part information

IRFBF30 Series

N-Channel 900 V 3.6A (Tc) 125W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources