IRFBF30 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

MOSFET N-CH 900V 3.6A TO220AB

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package
Vishay General Semiconductor - Diodes Division IRFBF30PBF	10 V	3.7 Ohm	3.6 A	Through Hole	78 nC	TO-220-3	125 W	4 V	1200 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	900 V	20 V	TO-220AB
Vishay General Semiconductor - Diodes Division IRFBF30S	10 V	3.7 Ohm	3.6 A	Surface Mount	78 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	125 W	4 V	1200 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	900 V	20 V	TO-263 (D2PAK)
Vishay General Semiconductor - Diodes Division IRFBF30L	10 V	3.7 Ohm	3.6 A	Through Hole	78 nC	I2PAK TO-262-3 Long Leads TO-262AA		4 V	1200 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	900 V	20 V	I2PAK
Vishay General Semiconductor - Diodes Division IRFBF30STRLPBF	10 V	3.7 Ohm	3.6 A	Surface Mount	78 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	125 W	4 V	1200 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	900 V	20 V	TO-263 (D2PAK)
Vishay General Semiconductor - Diodes Division IRFBF30SPBF	10 V	3.7 Ohm	3.6 A	Surface Mount	78 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	125 W	4 V	1200 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	900 V	20 V	TO-263 (D2PAK)
Vishay General Semiconductor - Diodes Division IRFBF30	10 V	3.7 Ohm	3.6 A	Through Hole	78 nC	TO-220-3	125 W	4 V	1200 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	900 V	20 V	TO-220AB
Vishay General Semiconductor - Diodes Division IRFBF30PBF-BE3		3.7 Ohm	3.6 A	Through Hole	78 nC	TO-220-3	125 W	4 V	1200 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	900 V	20 V	TO-220AB