Discrete Semiconductor Products

KSA1013RTA

Obsolete

TRANS PNP 160V 1A TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PNP 160V 1A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSA1013RTA

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

PNP Epitaxial Silicon Transistor

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Operating Temperature	Frequency - Transition	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Package / Case
ON Semiconductor KSA1013YBU	900 mW	1 µA	160 V	TO-92-3	150 °C	50 MHz	Through Hole	60	1 A	PNP	1.5 V	TO-226-3 TO-92-3 Long Body
ON Semiconductor KSA1013RTA	900 mW	1 µA	160 V	TO-92-3	150 °C	50 MHz	Through Hole	60	1 A	PNP	1.5 V	Formed Leads TO-226-3 TO-92-3 Long Body
ON Semiconductor KSA1013OTA	900 mW	1 µA	160 V	TO-92-3	150 °C	50 MHz	Through Hole	100	1 A	PNP	1.5 V	Formed Leads TO-226-3 TO-92-3 Long Body
ON Semiconductor KSA1013OBU	900 mW	1 µA	160 V	TO-92-3	150 °C	50 MHz	Through Hole	100	1 A	PNP	1.5 V	TO-226-3 TO-92-3 Long Body

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources