Discrete Semiconductor Products

KSA1013YBU

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BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 160 V, 1 A, 900 MW, TO-226AA, THROUGH HOLE

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 160 V, 1 A, 900 MW, TO-226AA, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	KSA1013YBU

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

PNP Epitaxial Silicon Transistor

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Operating Temperature	Frequency - Transition	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Package / Case
ON Semiconductor KSA1013YBU	900 mW	1 µA	160 V	TO-92-3	150 °C	50 MHz	Through Hole	60	1 A	PNP	1.5 V	TO-226-3 TO-92-3 Long Body
ON Semiconductor KSA1013RTA	900 mW	1 µA	160 V	TO-92-3	150 °C	50 MHz	Through Hole	60	1 A	PNP	1.5 V	Formed Leads TO-226-3 TO-92-3 Long Body
ON Semiconductor KSA1013OTA	900 mW	1 µA	160 V	TO-92-3	150 °C	50 MHz	Through Hole	100	1 A	PNP	1.5 V	Formed Leads TO-226-3 TO-92-3 Long Body
ON Semiconductor KSA1013OBU	900 mW	1 µA	160 V	TO-92-3	150 °C	50 MHz	Through Hole	100	1 A	PNP	1.5 V	TO-226-3 TO-92-3 Long Body

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources