2N4861UB/TR
Active30V 360MW ROUND-END JFET TR UB ROHS COMPLIANT: YES
Deep-Dive with AI
Search across all available documentation for this part.
2N4861UB/TR
Active30V 360MW ROUND-END JFET TR UB ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N4861UB/TR |
|---|---|
| Current - Drain (Idss) @ Vds (Vgs=0) | 8 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 18 pF |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Power - Max [Max] | 360 mW |
| Resistance - RDS(On) | 60 Ohms |
| Supplier Device Package | UB |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Voltage - Cutoff (VGS off) @ Id | 800 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 100 | $ 84.83 | |
| Microchip Direct | N/A | 1 | $ 91.35 | |
| Newark | Each (Supplied on Full Reel) | 100 | $ 84.83 | |
| 500 | $ 81.56 | |||
Description
General part information
2N4861UB-JFET-Nchannel Series
This specification covers the performance requirements for N-channel, depletion mode, silicon 2N4856 through 2N4861 J-FET (Junction Field Effect transistor). Four levels of product assurance are provided for each device (JAN, JANTX, JANTXV, and JANS) as specified in MIL-PRF-19500/385. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: TO-18 (no suffix) and surface mount (UB suffix) for all encapsulated device types.
Documents
Technical documentation and resources