Discrete Semiconductor Products
STD80N6F6
ObsoleteSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 60 V, 4.4 MOHM TYP., 80 A STRIPFET(TM) VI DEEPGATE(TM) POWER MOSFET IN A DPAK PACKAGE
Discrete Semiconductor Products
STD80N6F6
ObsoleteSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 60 V, 4.4 MOHM TYP., 80 A STRIPFET(TM) VI DEEPGATE(TM) POWER MOSFET IN A DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD80N6F6 |
|---|---|
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 122 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 7480 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 120 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.76 | |
Description
General part information
STD80 Series
These devices utilize the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Documents
Technical documentation and resources
