Discrete Semiconductor Products

2N7002K

Active

MOSFET SOT-23 N CHANNEL 60V

Discrete Semiconductor Products

Active

MOSFET SOT-23 N CHANNEL 60V

Technical Specifications

Parameters and characteristics for this part

Specification	2N7002K

Current - Continuous Drain (Id) (Ta)	500 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	0.31 nC
Input Capacitance (Ciss) (Max)	23.8 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23
Power Dissipation (Max)	500 mW
Rds On (Max)	900 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

Part	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	FET Type	Operating Temperature (Max)	Operating Temperature (Min)	Mounting Type	Technology	Current - Continuous Drain (Id) (Ta)	Vgs (Max)	Drain to Source Voltage (Vdss)	Package Name	Vgs(th) (Max)	Package / Case	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)
MDD 2N7002K	23.8 pF	0.31 nC	N-Channel	150 °C	-55 °C	Surface Mount	MOSFET (Metal Oxide)	500 mA	20 V	60 V	SOT-23	2.5 V	SC-59 SOT-23-3 TO-236-3	900 mOhm	10 V	4.5 V	500 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Tape & Reel (TR)	12000	$ 0.04	<4d

3D models and CAD resources for this part

General part information

N-Channel 60 V 500mA (Ta) 500mW (Ta) Surface Mount SOT-23

Technical documentation and resources