Discrete Semiconductor Products

FDMS86550ET60

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ON Semiconductor

MOSFET, N-CH, 60V, 245A, 175DEG C, 187W ROHS COMPLIANT: YES

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DocumentsProduct Change Notice EN Datasheet +1

Discrete Semiconductor Products

FDMS86550ET60

Active

ON Semiconductor

MOSFET, N-CH, 60V, 245A, 175DEG C, 187W ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDMS86550ET60

Current - Continuous Drain (Id) @ 25°C	245 A, 32 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	154 nC
Input Capacitance (Ciss) (Max) @ Vds	8235 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.3 W, 187 W
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

FDMS86568_F085 Series

N-Channel Dual Cool<sup>TM</sup> 56 Shielded Gate PowerTrench<sup>®</sup> MOSFET 150V, 40A, 17mΩ

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Grade	Qualification	Power Dissipation (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FDMS86104	100 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V	24 mOhm	-55 °C	150 °C	4 V	16 nC	7 A 16 A	8-PowerTDFN	2.5 W 73 W	923 pF	Surface Mount	6 V 10 V	N-Channel
ON Semiconductor FDMS8670AS	30 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	150 °C	3 V		23 A 42 A	8-PowerTDFN	2.5 W 78 W	3615 pF	Surface Mount	4.5 V 10 V	N-Channel	3 mOhm	55 nC
ON Semiconductor FDMS86581-F085	60 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	175 ░C	4 V		30 A	8-PowerTDFN	50 W	881 pF	Surface Mount	10 V	N-Channel	15 mOhm	19 nC	Automotive	AEC-Q101
ON Semiconductor FDMS8680	30 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	150 °C	3 V	26 nC	14 A 35 A	8-PowerTDFN	2.5 W 50 W	1590 pF	Surface Mount	4.5 V 10 V	N-Channel	7 mOhm
ON Semiconductor FDMS86101A	100 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	150 °C	4 V	58 nC	13 A 60 A	8-PowerTDFN		4120 pF	Surface Mount	6 V 10 V	N-Channel	8 mOhm				2.5 W	104 W
ON Semiconductor FDMS86322	80 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	150 °C	4 V		13 A 60 A	8-PowerTDFN			Surface Mount	6 V 10 V	N-Channel	7.65 mOhm	55 nC			2.5 W	104 W	3000 pF
ON Semiconductor FDMS86255ET150	150 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	175 ░C	4 V	63 nC	10 A 63 A	8-PowerTDFN	3.3 W 136 W	4480 pF	Surface Mount	6 V 10 V	N-Channel
ON Semiconductor FDMS86255	150 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	150 °C	4 V	63 nC	10 A 45 A	8-PowerTDFN	2.7 W 113 W	4480 pF	Surface Mount	6 V 10 V	N-Channel
ON Semiconductor FDMS86200DC	150 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	20 V		-55 °C	150 °C	4 V		9.3 A 28 A	8-PowerTDFN	3.2 W 125 W	2955 pF	Surface Mount	6 V 10 V	N-Channel	17 mOhm	42 nC
ON Semiconductor FDMS86181E

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 7.17
		10	$ 6.15
		100	$ 5.12
		500	$ 4.52
		1000	$ 4.07
	Digi-Reel®	1	$ 7.17
		10	$ 6.15
		100	$ 5.12
		500	$ 4.52
		1000	$ 4.07
	Tape & Reel (TR)	3000	$ 3.81
Newark	Each (Supplied on Cut Tape)	1	$ 7.46
		10	$ 5.42
		25	$ 5.34
ON Semiconductor	N/A	1	$ 3.43

Description

General part information

FDMS86568_F085 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Package Drawing-483AG-PQFN8 5x6, 1.27P

Package Drawing